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= gce gate collector emitter e g n-channel c d 2 -pak irgs4610dpbf
? appliance drives ? inverters ? ups features benefits low v ce(on) and switching losses high efficiency in a wide range of applications and switching frequencies square rbsoa and maximum junction temperature 175c improved reliability due to rugged hard switching performance and higher power capability positive v ce(on) temperature coefficient and tighter distribution of parameters excellent current sharing in parallel operation 5 s short circuit soa enables short circuit protection scheme lead-free, rohs compliant environmentally friendly
irgb4610dpbf c e c g

absolute maximum ratings parameter max. units v ces collector-to-emitter breakdown voltage v i c @ t c = 25c continuous collector current i c @ t c = 100c continuous collector current i cm pulsed collector current, v ge = 15v i lm clamped inductive load current, v ge = 20v a i f @ t c = 25c diode continuous forward current i f @ t c =100c diode continuous forward current i fm diode maximum forward current ? continuous gate-to-emitter voltage v transient gate-to-emitter voltage p d @ t c =25 maximum power dissipation w p d @ t c =100 maximum power dissipation t j operating junction and t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case) mounting torque, 6-32 or m3 screw to-220 v ge 600 16 10 18 24 10 6 24 -40 to + 175 10lbf. in (1.1 n.m) 20 30 77 39 c 300 !"#$%&"' (" base part number package type orderable part number form quantity tube 75 irgr4610dpbf tape and reel 2000 irgr4610dtrpbf tape and reel right 3000 irgr4610dtrrpbf tape and reel left 3000 IRGR4610DTRLPBF tube 50 irgs4610dpbf tape and reel right 800 irgs4610dtrrpbf tape and reel left 800 irgs4610dtrlpbf irgb4610dpbf to-220ab tube 50 irgb4610dpbf standard pack d 2 pak d-pak irgr4610dpbf irgs4610dpbf

!"#$%&"' (" notes: v cc = 80% (v ces ), v ge = 20v, l = 1.0mh, r g = 100 . r is measured at t j approximately 90c refer to an-1086 for guidelines for measuring v (br)ces safely. pulse width limited by max. junction temperature. values influenced by parasitic l and c in measurement when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994 : http://www.irf.com/technical-info/appnotes/an-994.pdf thermal resistance parameter min. typ. max. units r ) ??? ??? 1.9 r ) ??? ??? 6.3 r ) ) . ) ) ??? ??? 50 thermal resistance, junction-to-ambient (d-pak) ??? ??? 110 thermal resistance, junction-to-ambient (pcb mount, steady state) (d 2 pak) ??? ??? 40 thermal resistance, junction-to-ambient ( socket mount) (to-220) ??? ??? 62 r ja c/w electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c =100 a v (br)ces / . . / = = a ( 25 -175 o c ) ?1.72.0 i c = 6.0a, v ge = 15v, t j = 25c v ce(on) collector-to-emitter saturation voltage ? 2.07 ? v i c = 6.0a, v ge = 15v, t j = 150c ?2.14? i c = 6.0a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 4.0 ? 6.5 v v ce = v ge , i c = 150 a ) / . / = = a ( 25 -175 o c ) gfe forward transconductance ? 5.8 ? s v ce = 25v, i c = 6.0a, pw =80 s i ces ??25 av ge = 0v,v ce = 600v ? ? 250 v ge = 0v, v ce = 600v, t j =175c v fm ? 1.60 2.30 v i f = 6.0a ?1.30? i f = 6.0a, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20 v diode forward voltage drop collector-to-emitter leakage current

!"#$%&"' (" switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) ? 13 ? i c = 6.0a q ge gate-to-emitter charge (turn-on) ? 3.0 ? nc v cc = 400v q gc gate-to-collector charge (turn-on) ? 6.4 ? v ge = 15v e on turn-on switching loss ? 56 ? i c = 6.0a, v cc = 400v, v ge = 15v e off turn-off switching loss ? 122 ? jr g = 47 = = = ) = . = = = = ) = t f fall time ? 17 ? e on turn-on switching loss ? 140 ? i c = 6.0a, v cc = 400v, v ge = 15v e off turn-off switching loss ? 189 ? j r g = 47 = = = ) = . = = = = ) = t f fall time ? 32 ? c ies input capacitance ? 350 ? v ge = 0v c oes output capacitance ? 29 ? v cc = 30v c res reverse transfer capacitance ? 10 ? f = 1mhz t j = 175c, i c = 24a rbsoa reverse bias safe operating area full square v cc = 500v, vp =600v r g = 100 = = = = = j t j = 175 o c trr diode reverse recovery time ? 74 ? ns v cc = 400v, i f = 6.0a irr peak reverse recovery current ? 12 ? a v ge = 15v, rg = 47 = = s pf conditions ?

) !"#$%&"' (" fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 4 - reverse bias soa t j = 175c, v ge = 20v fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80 s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80 s fig. 3 - forward soa, t c = 25c, t j 175c, v ge = 15v 0 2 4 6 8 10 v ce (v) 0 5 10 15 20 i c e ( a ) top v ge = 18v v ge = 15v v ge = 12v v ge = 10v bottom v ge = 8.0v 0 2 4 6 8 10 v ce (v) 0 5 10 15 20 i c e ( a ) top v ge = 18v v ge = 15v v ge = 12v v ge = 10v bottom v ge = 8.0v 25 50 75 100 125 150 175 t c (c) 0 2 4 6 8 10 12 14 16 18 i c ( a ) 25 50 75 100 125 150 175 t c (c) 0 10 20 30 40 50 60 70 80 p t o t ( w ) 10 100 1000 v ce (v) 0 1 10 100 i c a ) 1 10 100 1000 v ce (v) 0.1 1 10 100 i c ( a ) 10 sec 100 sec tc = 25c tj = 175c single pulse dc

!"#$%&"' (" fig. 9 - typical v ce vs. v ge t j = -40c fig. 7 - typ. igbt output characteristics t j = 175c; tp = 80 s fig. 10 - typical v ce vs. v ge t j = 25c fig. 8 - typ. diode forward characteristics tp = 80 s fig. 12 - typ. transfer characteristics v ce = 50v; tp = 10 s fig. 11 - typical v ce vs. v ge t j = 175c 0.0 1.0 2.0 3.0 v f (v) 0 2 4 6 8 10 12 14 16 18 20 i f ( a ) -40c 25c 175c 5 101520 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 3.0a i ce = 6.0a i ce = 12a 5 101520 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 3.0a i ce = 6.0a i ce = 12a 5 101520 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 3.0a i ce = 6.0a i ce = 12a 0 2 4 6 8 10 v ce (v) 0 5 10 15 20 i c e ( a ) top v ge = 18v v ge = 15v v ge = 12v v ge = 10v bottom v ge = 8.0v 4 6 8 10121416 v ge, gate-to-emitter voltage (v) 0 2 4 6 8 10 12 14 16 18 20 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 25c t j = 175c

* !"#$%&"' (" fig. 13 - typ. energy loss vs. i c t j = 175c; l = 1mh; v ce = 400v, r g = 47 ; v ge = 15v. fig. 15 - typ. energy loss vs. r g t j = 175c; l = 1mh; v ce = 400v, i ce = 6.0a; v ge = 15v fig. 14 - typ. switching time vs. i c t j = 175c; l=1mh; v ce = 400v r g = 47 ; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 175c; l=1mh; v ce = 400v i ce = 6.0a; v ge = 15v fig. 17 - typical diode i rr vs. i f t j = 175c fig. 18 - typical diode i rr vs. r g t j = 175c; i f = 6.0a 02468101214 i c (a) 50 100 150 200 250 300 350 400 e n e r g y ( j ) e off e on 2 4 6 8 10 12 14 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 25 50 75 100 125 rg ( ) 60 80 100 120 140 160 180 200 220 e n e r g y ( j ) e off e on 0 25 50 75 100 125 r g ( ) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 2 4 6 8 10 12 14 i f (a) 0 5 10 15 20 25 30 i r r ( a ) r g = 10 r g = 22 r g = 47 r g = 100 0 25 50 75 100 125 r g ( ) 6 8 10 12 14 16 18 20 22 i r r ( a )

!"#$%&"' (" fig. 20 - typical diode q rr v cc = 400v; v ge = 15v; t j = 175c fig. 19 - typical diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i ce = 6.0a; t j = 175c fig. 24 - typical gate charge vs. v ge i ce = 6.0a, l=600 h fig. 23 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 22 - typ. v ge vs. short circuit time v cc =400v, t c =25c fig. 21 - typical diode e rr vs. i f t j = 175c 0 100 200 300 400 500 v ce (v) 1 10 100 1000 c a p a c i t a n c e ( p f ) cies coes cres 0 200 400 600 800 1000 1200 di f /dt (a/ s) 6 8 10 12 14 16 18 20 i r r ( a ) 2 4 6 8 10 12 14 i f (a) 50 100 150 200 250 300 350 e n e r g y ( j ) r g = 10 r g = 22 r g = 47 r g = 100 8 1012141618 v ge (v) 0 5 10 15 20 t i m e ( s ) 10 20 30 40 50 c u r r e n t ( a ) t sc i sc 0 2 4 6 8 10 12 14 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v v ces = 300v 0 500 1000 1500 di f /dt (a/ s) 200 400 600 800 1000 1200 q r r ( n c ) 10 22 100 47 6.0a 12a 3.0a

+ !"#$%&"' (" fig. 26. maximum transient thermal impedance, junction-to-case (diode) fig 25. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.0415 0.000005 0.7262 0.000076 0.7721 0.000810 0.4016 0.004929 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.2195 0.000023 1.7733 0.000165 2.9352 0.001493 1.3704 0.013255

, !"#$%&"' (" fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 1k vcc dut 0 l fig.c.t.3 - s.c.soa circuit fig.c.t.4 - switching loss circuit l rg 80 v dut 480v + - fig.c.t.5 - resistive load circuit fig.c.t.6 - typical filter circuit for v (br)ces measurement

!"#$%&"' (" fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 wf.3- typ. diode recovery waveform @ t j = 175c using ct.4 wf.4- typ. short circuit waveform @ t j = 25c using ct.3 0 50 100 150 200 250 300 350 400 450 500 -2-1012345678 time (us) vce (v) -20 -10 0 10 20 30 40 50 60 70 80 v ce i ce -600 -500 -400 -300 -200 -100 0 100 -0.05 0.05 0.15 0.25 time ( s) v f (v) -20 -15 -10 -5 0 5 10 15 pea k i rr t rr q rr 10% pea k irr -100 0 100 200 300 400 500 600 -0.2 0 0.2 0.4 0.6 0.8 1 time( s) v ce (v) -2 0 2 4 6 8 10 12 90% i ce 5% v ce 5% i ce eoff loss tf -100 0 100 200 300 400 500 600 4.3 4.5 4.7 time ( s) v ce (v) -5 0 5 10 15 20 25 30 test current 90% test current 5% v ce 10% test current tr eon loss

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international logo rectifier 34 12 irfu120 916a lot code assembly example: with assembly this is an irfr120 ye ar 9 = 1999 dat e code line a week 16 in the assembly line "a" as s embled on ww 16, 1999 lot code 1234 part number

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tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch

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dat e code year 0 = 2000 we e k 02 a = assembly site code rectifier int ernat ional part number p = designates lead - free product (opt ional) f530s in the assembly line "l" as s e mb l e d on ww 02, 2000 t his is an irf530s wit h lot code 8024 int ernat ional logo rectifier lot code assembly year 0 = 2000 part number dat e code line l we e k 0 2 or f530s logo as s e mb l y lot code

) !"#$%&"' (" (dimensions are shown in millimeters (inches)) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.

!"#$%&"' (" ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ to-220ab packages are not recommended for surface mount application.
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! internat ional part number rectifier lot code as s e mb l y logo year 0 = 2000 dat e code week 19 line c lot code 1789 example: t his is an irf1010 note: "p" in assembly line position indicates "l ead - f r ee" in the assembly line "c" ass embled on ww 19, 2000

d-pak d 2 pak to-220 n/a qualification information ? qualification level industrial (per jedec jesd47f) ?? moisture sensitivity level rohs compliant yes msl1

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